-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT - researchr publication authors

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Attilio Belmonte, S. Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar. -21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

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