Attilio Belmonte, S. Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar. -21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{BelmonteKSCRDPS23,
title = {-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT},
author = {Attilio Belmonte and S. Kundu and S. Subhechha and Adrian Vaisman Chasin and Nouredine Rassoul and Harold Dekkers and H. Puliyalil and F. Seidel and P. Carolan and Romain Delhougne and Gouri Sankar Kar},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185398},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185398},
researchr = {https://researchr.org/publication/BelmonteKSCRDPS23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}