Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout

N. Berbel, Raúl Fernández-García, Ignacio Gil, B. Li, Alexandre Boyer, Sonia Bendhia. Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. Microelectronics Reliability, 51(9-11):1564-1567, 2011. [doi]

Abstract

Abstract is missing.