A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology

S. Bernardini, Jean Michel Portal, Pascal Masson. A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology. In 2004 Design, Automation and Test in Europe Conference and Exposition (DATE 2004), 16-20 February 2004, Paris, France. pages 1404-1405, IEEE Computer Society, 2004. [doi]

@inproceedings{BernardiniPM04,
  title = {A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology},
  author = {S. Bernardini and Jean Michel Portal and Pascal Masson},
  year = {2004},
  url = {http://csdl.computer.org/comp/proceedings/date/2004/2085/02/208521404abs.htm},
  tags = {Pascal},
  researchr = {https://researchr.org/publication/BernardiniPM04},
  cites = {0},
  citedby = {0},
  pages = {1404-1405},
  booktitle = {2004 Design, Automation and Test in Europe Conference and Exposition (DATE 2004), 16-20 February 2004, Paris, France},
  publisher = {IEEE Computer Society},
  isbn = {0-7695-2085-5},
}