Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière. Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectronics Reliability, 51(9-11):1796-1800, 2011. [doi]

@article{BerthetGGBTPG11,
  title = {Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy},
  author = {F. Berthet and Y. Guhel and H. Gualous and B. Boudart and J. L. Trolet and M. Piccione and C. Gaquière},
  year = {2011},
  doi = {10.1016/j.microrel.2011.07.022},
  url = {http://dx.doi.org/10.1016/j.microrel.2011.07.022},
  researchr = {https://researchr.org/publication/BerthetGGBTPG11},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {51},
  number = {9-11},
  pages = {1796-1800},
}