Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière. Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectronics Reliability, 51(9-11):1796-1800, 2011. [doi]

Abstract

Abstract is missing.