Abhishek Bhattacharjee, Abhishek Nag, Kaushik Das, Sambhu Nath Pradhan. Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation. J. Electronic Testing, 38(1):91-105, 2022. [doi]
@article{BhattacharjeeND22,
title = {Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation},
author = {Abhishek Bhattacharjee and Abhishek Nag and Kaushik Das and Sambhu Nath Pradhan},
year = {2022},
doi = {10.1007/s10836-022-05990-4},
url = {https://doi.org/10.1007/s10836-022-05990-4},
researchr = {https://researchr.org/publication/BhattacharjeeND22},
cites = {0},
citedby = {0},
journal = {J. Electronic Testing},
volume = {38},
number = {1},
pages = {91-105},
}