Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation

Abhishek Bhattacharjee, Abhishek Nag, Kaushik Das, Sambhu Nath Pradhan. Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation. J. Electronic Testing, 38(1):91-105, 2022. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.