Ran Bi, Baotong Zhang, Jianhuan Wang, Jianjun Zhang, Haixia Li, Ming Li. TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor. In 15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023. pages 1-4, IEEE, 2023. [doi]
@inproceedings{BiZWZLL23, title = {TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor}, author = {Ran Bi and Baotong Zhang and Jianhuan Wang and Jianjun Zhang and Haixia Li and Ming Li}, year = {2023}, doi = {10.1109/ASICON58565.2023.10396480}, url = {https://doi.org/10.1109/ASICON58565.2023.10396480}, researchr = {https://researchr.org/publication/BiZWZLL23}, cites = {0}, citedby = {0}, pages = {1-4}, booktitle = {15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023}, publisher = {IEEE}, isbn = {979-8-3503-1298-0}, }