TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor

Ran Bi, Baotong Zhang, Jianhuan Wang, Jianjun Zhang, Haixia Li, Ming Li. TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor. In 15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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