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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, 76:500-506, 2017. [doi]

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F. Boige

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Frédéric Richardeau

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David Trémouilles

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Stéphane Lefebvre

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G. Guibaud

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