The following publications are possibly variants of this publication:
- Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operationF. Boige, Frédéric Richardeau. mr, 76:532-538, 2017. [doi]
- Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operationF. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane. mr, 88:598-603, 2018. [doi]
- SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementationF. Boige, Frédéric Richardeau, Stéphane Lefebvre, Marc Cousineau. mcs, 158:375-386, 2019. [doi]