F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, 76:500-506, 2017. [doi]
@article{BoigeRTLG17,
title = {Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation},
author = {F. Boige and Frédéric Richardeau and David Trémouilles and Stéphane Lefebvre and G. Guibaud},
year = {2017},
doi = {10.1016/j.microrel.2017.06.085},
url = {https://doi.org/10.1016/j.microrel.2017.06.085},
researchr = {https://researchr.org/publication/BoigeRTLG17},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {76},
pages = {500-506},
}