L. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den bosch, Maarten Rosmeulen. High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. In IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. pages 1-4, IEEE, 2022. [doi]
@inproceedings{BreuilNRBABRbR22,
title = {High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction},
author = {L. Breuil and L. Nyns and S. Rachidi and K. Banerjee and Antonio Arreghini and J. Bastos and S. Ramesh and G. Van den bosch and Maarten Rosmeulen},
year = {2022},
doi = {10.1109/IMW52921.2022.9779307},
url = {https://doi.org/10.1109/IMW52921.2022.9779307},
researchr = {https://researchr.org/publication/BreuilNRBABRbR22},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9947-7},
}