High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction - researchr publication authors

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L. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den bosch, Maarten Rosmeulen. High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. In IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. pages 1-4, IEEE, 2022. [doi]

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