Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation

R. L. Bruce, S. Ghazi Sarwat, Irem Boybat, C. W. Cheng, W. Kim, S. R. Nandakumar, Charles Mackin, T. Philip, Z. Liu, K. Brew, Nanbo Gong, I. Ok, Praneet Adusumilli, Katie Spoon, Stefano Ambrogio, Benedikt Kersting, T. Bohnstingl, Manuel Le Gallo, A. Simon, N. Li, I. Saraf, J.-P. Han, L. M. Gignac, J. M. Papalia, T. Yamashita, N. Saulnier, Geoffrey W. Burr, H. Tsai, Abu Sebastian, Vijay Narayanan, Matthew BrightSky. Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-6, IEEE, 2021. [doi]

Abstract

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