Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors - researchr publication

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Rajat Butola, Yiming Li 0005, Sekhar Reddy Kola, Chandni Akbar, Min-Hui Chuang. Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors. Computers & Electrical Engineering, 105:108554, January 2023. [doi]

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