Yiming Li 0005 - researchr alias

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Viewing Publication 1 - 5 from 5

2025

Transfer learning approach to modeling multichannel gate-all-around nanosheet field-effect transistors under work function fluctuationsSagarika Dash, Yiming Li 0005. eaai, 148:110322, 2025. [doi]

2023

Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistorsRajat Butola, Yiming Li 0005, Sekhar Reddy Kola, Chandni Akbar, Min-Hui Chuang. cee, 105:108554, January 2023. [doi]

A Hybrid 1D-CNN-LSTM Technique for WKF-Induced Variability of Multi-Channel GAA NS- and NF-FETsSagarika Dash, Yiming Li 0005, Wen-Li Sung. access, 11:56619-56633, 2023. [doi]

Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect TransistorsSekhar Reddy Kola, Yiming Li 0005, Min-Hui Chuang. isqed 2023: 1-8 [doi]

Exploring the Performance of 3-D Nanosheet FET in Inversion and Junctionless Modes: Device and Circuit-Level Analysis and ComparisonV. Bharath Sreenivasulu, Aruna Kumari Neelam, Sekhar Reddy Kola, Jawar Singh, Yiming Li 0005. access, 11:90421-90429, 2023. [doi]

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