Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast - researchr publication authors

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Marco Buzzo, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner. Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast. Microelectronics Reliability, 45(9-11):1499-1504, 2005. [doi]

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