Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes - researchr publication authors

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Dong-Wook Byun, Min Yeong Kim, Soo Young Moon, Myeongcheol Shin, Michael. A Schweitz, Sang-Mo Koo. Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 249-252, IEEE, 2022. [doi]

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