Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes

Dong-Wook Byun, Min Yeong Kim, Soo Young Moon, Myeongcheol Shin, Michael. A Schweitz, Sang-Mo Koo. Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 249-252, IEEE, 2022. [doi]

@inproceedings{ByunKMSSK22,
  title = {Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes},
  author = {Dong-Wook Byun and Min Yeong Kim and Soo Young Moon and Myeongcheol Shin and Michael. A Schweitz and Sang-Mo Koo},
  year = {2022},
  doi = {10.1109/ESSDERC55479.2022.9947098},
  url = {https://doi.org/10.1109/ESSDERC55479.2022.9947098},
  researchr = {https://researchr.org/publication/ByunKMSSK22},
  cites = {0},
  citedby = {0},
  pages = {249-252},
  booktitle = {52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-8497-8},
}