A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology - researchr publication authors

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Steven Callender, Amy Whitcombe, Abhishek Agrawal, Ritesh Bhat, Mustafijur Rahman, Chun C. Lee, Peter Sagazio, Georgios Dogiamis, Brent R. Carlton, Mark Chakravorti, Stefano Pellerano, Christopher D. Hull. A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 78-80, IEEE, 2022. [doi]

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