A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology

Steven Callender, Amy Whitcombe, Abhishek Agrawal, Ritesh Bhat, Mustafijur Rahman, Chun C. Lee, Peter Sagazio, Georgios Dogiamis, Brent R. Carlton, Mark Chakravorti, Stefano Pellerano, Christopher D. Hull. A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 78-80, IEEE, 2022. [doi]

Abstract

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