An 18-GHz, 10.9-dBm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS

Changhua Cao, Haifeng Xu, Yu Su, Kenneth K. O. An 18-GHz, 10.9-dBm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS. In Laurent Fesquet, Andreas Kaiser, Sorin Cristoloveanu, Michel Brillouët, editors, Proceedings of the 31st European Solid-State Circuits Conference, ESSCIRC 2005, Grenoble, France, 12-16 September 2005. pages 137-140, IEEE, 2005. [doi]

Abstract

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