On the electron mobility of strained InGaAs channel MOSFETs - researchr publication authors

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Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi. On the electron mobility of strained InGaAs channel MOSFETs. In 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. pages 266-269, IEEE, 2019. [doi]

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