Electron mobility in thin In0.53Ga0.47As channel

E. Cartier, A. Majumdar, K. T. Lee, T. Ando, M. M. Frank, J. Rozen, K. A. Jenkins, C. Liang, C. W. Cheng, J. Bruley, M. Hopstaken, P. Kerber, J.-B. Yau, X. Sun, R. T. Mo, C.-C. Yeh, E. Leobandung, V. Narayanan. Electron mobility in thin In0.53Ga0.47As channel. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 292-295, IEEE, 2017. [doi]

Abstract

Abstract is missing.