Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations - researchr publication authors

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Víctor H. Champac, Hector Villacorta, Roberto Gómez-Fuentes, Fabian Vargas 0001, Jaume Segura 0001. Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations. In 23rd IEEE Latin American Test Symposium, LATS 2022, Montevideo, Uruguay, September 5-8, 2022. pages 1-6, IEEE, 2022. [doi]

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