Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations

Víctor H. Champac, Hector Villacorta, Roberto Gómez-Fuentes, Fabian Vargas 0001, Jaume Segura 0001. Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations. In 23rd IEEE Latin American Test Symposium, LATS 2022, Montevideo, Uruguay, September 5-8, 2022. pages 1-6, IEEE, 2022. [doi]

@inproceedings{ChampacVGVS22,
  title = {Failure Probability due to Radiation-induced Effects in FinFET SRAM Cells under Process Variations},
  author = {Víctor H. Champac and Hector Villacorta and Roberto Gómez-Fuentes and Fabian Vargas 0001 and Jaume Segura 0001},
  year = {2022},
  doi = {10.1109/LATS57337.2022.9936923},
  url = {https://doi.org/10.1109/LATS57337.2022.9936923},
  researchr = {https://researchr.org/publication/ChampacVGVS22},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {23rd IEEE Latin American Test Symposium, LATS 2022, Montevideo, Uruguay, September 5-8, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-5707-1},
}