0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process

Yun-Sheng Chan, Po-Tsang Huang, Shang-Lin Wu, Sheng-Chi Lung, Wei-Chang Wang, Wei Hwang, Ching-Te Chuang. 0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process. In 31st IEEE International System-on-Chip Conference, SOCC 2018, Arlington, VA, USA, September 4-7, 2018. pages 272-277, IEEE, 2018. [doi]

@inproceedings{ChanHWLWHC18,
  title = {0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process},
  author = {Yun-Sheng Chan and Po-Tsang Huang and Shang-Lin Wu and Sheng-Chi Lung and Wei-Chang Wang and Wei Hwang and Ching-Te Chuang},
  year = {2018},
  doi = {10.1109/SOCC.2018.8618562},
  url = {https://doi.org/10.1109/SOCC.2018.8618562},
  researchr = {https://researchr.org/publication/ChanHWLWHC18},
  cites = {0},
  citedby = {0},
  pages = {272-277},
  booktitle = {31st IEEE International System-on-Chip Conference, SOCC 2018, Arlington, VA, USA, September 4-7, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-1491-4},
}