Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride

Jackie Chan, Hei Wong, M.-C. Poon, C. W. Kok. Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. Microelectronics Reliability, 43(4):611-616, 2003. [doi]

Authors

Jackie Chan

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Hei Wong

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M.-C. Poon

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C. W. Kok

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