The following publications are possibly variants of this publication:
- SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layerM.-C. Poon, Y. Gao, T. C. W. Kok, A. M. Myasnikov, Hei Wong. mr, 41(12):2071-2074, 2001. [doi]
- Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitrideC. K. Wong, H. Wong, M. Chan, C. W. Kok, H. P. Chan. mr, 46(12):2056-2061, 2006. [doi]
- Defects in silicon oxynitride gate dielectric filmsHei Wong, V. A. Gritsenko. mr, 42(4-5):597-605, 2002. [doi]