Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride - researchr publication

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Jackie Chan, Hei Wong, M.-C. Poon, C. W. Kok. Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. Microelectronics Reliability, 43(4):611-616, 2003. [doi]

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