17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme - researchr publication authors

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Meng-Fan Chang, Chien-Fu Chen, Ting-Hao Chang, Chi-Chang Shuai, Yen-Yao Wang, Hiroyuki Yamauchi. 17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]

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