Meng-Fan Chang, Chien-Fu Chen, Ting-Hao Chang, Chi-Chang Shuai, Yen-Yao Wang, Hiroyuki Yamauchi. 17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]
@inproceedings{ChangCCSWY15,
title = {17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme},
author = {Meng-Fan Chang and Chien-Fu Chen and Ting-Hao Chang and Chi-Chang Shuai and Yen-Yao Wang and Hiroyuki Yamauchi},
year = {2015},
doi = {10.1109/ISSCC.2015.7063052},
url = {http://dx.doi.org/10.1109/ISSCC.2015.7063052},
researchr = {https://researchr.org/publication/ChangCCSWY15},
cites = {0},
citedby = {0},
pages = {1-3},
booktitle = {2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015},
publisher = {IEEE},
isbn = {978-1-4799-6224-2},
}