Meng-Fan Chang, Shi-Wei Chang, Po-wei Chou, Wei-Cheng Wu. A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications. J. Solid-State Circuits, 46(2):520-529, 2011. [doi]
@article{ChangCCW11,
title = {A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications},
author = {Meng-Fan Chang and Shi-Wei Chang and Po-wei Chou and Wei-Cheng Wu},
year = {2011},
doi = {10.1109/JSSC.2010.2091321},
url = {http://dx.doi.org/10.1109/JSSC.2010.2091321},
researchr = {https://researchr.org/publication/ChangCCW11},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {46},
number = {2},
pages = {520-529},
}