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Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes

T.-W. Chang, T. J. Chung, T. Ru, T. E. Nee, H. C. Lu, G. M. Wu. Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes. In 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2009, Shenzhen, China, January 5-8, 2009. pages 485-488, IEEE, 2009. [doi]

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T.-W. Chang

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T. J. Chung

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T. Ru

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T. E. Nee

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H. C. Lu

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G. M. Wu

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