T.-W. Chang, T. J. Chung, T. Ru, T. E. Nee, H. C. Lu, G. M. Wu. Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes. In 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2009, Shenzhen, China, January 5-8, 2009. pages 485-488, IEEE, 2009. [doi]
@inproceedings{ChangCRNLW09,
title = {Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes},
author = {T.-W. Chang and T. J. Chung and T. Ru and T. E. Nee and H. C. Lu and G. M. Wu},
year = {2009},
doi = {10.1109/NEMS.2009.5068624},
url = {http://doi.ieeecomputersociety.org/10.1109/NEMS.2009.5068624},
researchr = {https://researchr.org/publication/ChangCRNLW09},
cites = {0},
citedby = {0},
pages = {485-488},
booktitle = {4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2009, Shenzhen, China, January 5-8, 2009},
publisher = {IEEE},
isbn = {978-1-4244-4629-2},
}