A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Ku-Feng Lin, Shu-Meng Yang, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih. A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, February 19-23, 2012. pages 434-436, IEEE, 2012. [doi]

Abstract

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