Solomon Amsalu Chekol, Felix Cüppers, Rainer Waser, Susanne Hoffmann-Eifert. An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage ( 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{ChekolCWH21, title = {An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage ( 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing}, author = {Solomon Amsalu Chekol and Felix Cüppers and Rainer Waser and Susanne Hoffmann-Eifert}, year = {2021}, doi = {10.1109/IMW51353.2021.9439601}, url = {https://doi.org/10.1109/IMW51353.2021.9439601}, researchr = {https://researchr.org/publication/ChekolCWH21}, cites = {0}, citedby = {0}, pages = {1-4}, booktitle = {IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021}, publisher = {IEEE}, isbn = {978-1-7281-8517-0}, }