An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage ( 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing

Solomon Amsalu Chekol, Felix Cüppers, Rainer Waser, Susanne Hoffmann-Eifert. An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage ( 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

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