Ruicong Chen, Hanrui Wang 0002, Anantha P. Chandrakasan, Hae-Seung Lee. RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 94-95, IEEE, 2022. [doi]
@inproceedings{Chen0CL22,
title = {RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience},
author = {Ruicong Chen and Hanrui Wang 0002 and Anantha P. Chandrakasan and Hae-Seung Lee},
year = {2022},
doi = {10.1109/VLSITechnologyandCir46769.2022.9830365},
url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830365},
researchr = {https://researchr.org/publication/Chen0CL22},
cites = {0},
citedby = {0},
pages = {94-95},
booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9772-5},
}