RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience

Ruicong Chen, Hanrui Wang 0002, Anantha P. Chandrakasan, Hae-Seung Lee. RaM-SAR: A Low Energy and Area Overhead, 11.3fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 94-95, IEEE, 2022. [doi]

Abstract

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