0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee. 0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors, 18(9):2795, 2018. [doi]

This author has not been identified. Look up 'Pin-Guang Chen' in GoogleThis author has not been identified. Look up 'Kuan-Ting Chen' in GoogleThis author has not been identified. Look up 'Ming Tang' in GoogleThis author has not been identified. Look up 'Zheng-Ying Wang' in GoogleThis author has not been identified. Look up 'Yu-Chen Chou' in GoogleThis author has not been identified. Look up 'Min-Hung Lee' in Google

runs on WebDSL