0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications - researchr publication

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Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee. 0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors, 18(9):2795, 2018. [doi]

Abstract is missing.

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