Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee. 0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors, 18(9):2795, 2018. [doi]
@article{ChenCTWCL18,
title = {0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications},
author = {Pin-Guang Chen and Kuan-Ting Chen and Ming Tang and Zheng-Ying Wang and Yu-Chen Chou and Min-Hung Lee},
year = {2018},
url = {https://www.wikidata.org/entity/Q58703861},
researchr = {https://researchr.org/publication/ChenCTWCL18},
cites = {0},
citedby = {0},
journal = {Sensors},
volume = {18},
number = {9},
pages = {2795},
}