A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications - researchr publication authors

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Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Jonathan Chang. A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. J. Solid-State Circuits, 50(1):170-177, 2015. [doi]

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