Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Jonathan Chang. A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. J. Solid-State Circuits, 50(1):170-177, 2015. [doi]
@article{ChenCWLPLCLLCWC15,
title = {A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications},
author = {Yen-Huei Chen and Wei-Min Chan and Wei-Cheng Wu and Hung-Jen Liao and Kuo-Hua Pan and Jhon-Jhy Liaw and Tang-Hsuan Chung and Quincy Li and Chih-Yung Lin and Mu-Chi Chiang and Shien-Yang Wu and Jonathan Chang},
year = {2015},
doi = {10.1109/JSSC.2014.2349977},
url = {http://dx.doi.org/10.1109/JSSC.2014.2349977},
researchr = {https://researchr.org/publication/ChenCWLPLCLLCWC15},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {50},
number = {1},
pages = {170-177},
}