Ying-Yu Chen, Morteza Gholipour, Deming Chen. Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling. In 21st Asia and South Pacific Design Automation Conference, ASP-DAC 2016, Macao, Macao, January 25-28, 2016. pages 761-768, IEEE, 2016. [doi]
@inproceedings{ChenGC16-2,
title = {Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling},
author = {Ying-Yu Chen and Morteza Gholipour and Deming Chen},
year = {2016},
doi = {10.1109/ASPDAC.2016.7428103},
url = {http://dx.doi.org/10.1109/ASPDAC.2016.7428103},
researchr = {https://researchr.org/publication/ChenGC16-2},
cites = {0},
citedby = {0},
pages = {761-768},
booktitle = {21st Asia and South Pacific Design Automation Conference, ASP-DAC 2016, Macao, Macao, January 25-28, 2016},
publisher = {IEEE},
isbn = {978-1-4673-9569-4},
}