Ming-Jer Chen, Jib-Shin Ho. A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation. IEEE Trans. on CAD of Integrated Circuits and Systems, 16(4):343-352, 1997. [doi]
@article{ChenH97:0,
title = {A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation},
author = {Ming-Jer Chen and Jib-Shin Ho},
year = {1997},
doi = {10.1109/43.602471},
url = {http://doi.ieeecomputersociety.org/10.1109/43.602471},
tags = {process modeling},
researchr = {https://researchr.org/publication/ChenH97%3A0},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
volume = {16},
number = {4},
pages = {343-352},
}