A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation

Ming-Jer Chen, Jib-Shin Ho. A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation. IEEE Trans. on CAD of Integrated Circuits and Systems, 16(4):343-352, 1997. [doi]

Abstract

Abstract is missing.